New Laser-Plasma Source For Extreme-Ultraviolet Lithography
Abbreviated Journal Title
RAY PROJECTION LITHOGRAPHY; PHOTOGRAPHIC FILMS; Optics
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature sizes, projection extreme-ultraviolet (EUV) lithography becomes an increasingly attractive technology. The radiation source of choice for this approach is a laser plasma with a high repetition rate. We report an investigation of a new candidate laser plasma source for EUV lithography that is based on line emission from ice-water targets. This radiation source has the potential to meet all the strict requirements of EUV conversion, debris elimination, operation, and cost for a demonstration lithographic system.
"New Laser-Plasma Source For Extreme-Ultraviolet Lithography" (1995). Faculty Bibliography 1990s. 1368.