Title

Thermal And Reverse Base Current Effects On Heterojunction Bipolar-Transistors And Circuits

Authors

Authors

J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

HBT; Engineering, Electrical & Electronic; Physics, Applied

Abstract

An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT, for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit.

Journal Title

Ieee Transactions on Electron Devices

Volume

42

Issue/Number

5

Publication Date

1-1-1995

Document Type

Article

Language

English

First Page

789

Last Page

794

WOS Identifier

WOS:A1995QU42700001

ISSN

0018-9383

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