Analysis Of Abrupt And Linearly Graded Heterojunction Bipolar-Transistors With Or Without A Setback Layer
Abbreviated Journal Title
IEE Proc.-Circuit Device Syst.
BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SELF-HEATING JUNCTION CAPACITANCE; CURRENT GAIN; MODEL; RECOMBINATION; TRANSPORT; Engineering, Electrical & Electronic
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including the self-heating effect are demonstrated.
Iee Proceedings-Circuits Devices and Systems
"Analysis Of Abrupt And Linearly Graded Heterojunction Bipolar-Transistors With Or Without A Setback Layer" (1995). Faculty Bibliography 1990s. 1518.