Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral
Abbreviated Journal Title
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.
SEMICONDUCTOR FREE-CARRIER DENSITY; FERMI-DIRAC INTEGRAL; F1/2(ETA); Physics, Applied
We present the relative errors of the free-carrier concentration in a semiconductor at all temperatures associated a with three different approximations for the Fermi-Dirac integral of the order of 1/2. The results suggest that the errors peak at around 200 K and decrease outside this temperature range for all three doping concentrations considered (10(18), 10(19), and 10(20) cm(-3)).
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
"Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral" (1995). Faculty Bibliography 1990s. 1520.