Title

Investigation Of Diode-Pumped 2.8-Mu M Er:Liyf4 Lasers With Various Doping Levels

Authors

Authors

T. Jensen; A. Diening; G. Huber;B. H. T. Chai

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Opt. Lett.

Keywords

Optics

Abstract

We report on efficient lasers emission of Er:LiYF4 at 2.8 mu m. The crystals were pumped by InGaAs semiconductor laser emitting near 970 nm. The laser performance was investigated for different doping levels and yielded an optimum doping level of similar to 15%. At this Er3+ concentration we achieved a slope efficiency of 35%, which is identical to the quantum defect. Pumping at high power levels permits a true cw output power of 1.1 W at 2.8 mu m, which is of interest for several applications based on the strong water absorption in this wavelength range.

Journal Title

Optics Letters

Volume

21

Issue/Number

8

Publication Date

1-1-1996

Document Type

Article

DOI Link

http://dx.doi.org/10.1364/ol.21.000585

Language

English

First Page

585

Last Page

587

WOS Identifier

WOS:A1996UE61700013

ISSN

0146-9592

Recommended Citation

"Investigation Of Diode-Pumped 2.8-Mu M Er:Liyf4 Lasers With Various Doping Levels" (1996). Faculty Bibliography 1990s. 1648.
https://stars.library.ucf.edu/facultybib1990/1648