Parasitic Series Resistance-Independent Method For Device-Model Parameter Extraction
Abbreviated Journal Title
IEE Proc.-Circuit Device Syst.
model parameter extraction; semiconductor diodes; I-V characteristics; parasitic resistance; p-n diodes; SCHOTTKY DIODES; IDEALITY FACTOR; PLOT; Engineering, Electrical & Electronic
A new method is presented that permits the extraction of a semiconductor device's intrinsic model parameters from its experimental extrinsic forward I-V characteristics, independently of the parasitic resistance that might be present in series within the real device. The extraction is performed from an auxiliary function which contains the integral experimentally measured data. Integrating data also serves as a smoothing procedure. The diode quality factor, reverse current and series resistance parameters of a single exponential diode model are extracted from a real p-n junction diode in order to illustrate the method.
Iee Proceedings-Circuits Devices and Systems
"Parasitic Series Resistance-Independent Method For Device-Model Parameter Extraction" (1996). Faculty Bibliography 1990s. 1745.