Title
Effects of high-level free-carrier injection on the base transit time of bipolar junction transistors
Abbreviated Journal Title
Solid-State Electron.
Keywords
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
This paper presents a detailed study on the effects of high-level free-carrier injection on the base transit time of bipolar junction transistors (BJTs). The results are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the quasi-neutral base (QNB). It is shown that high-level injection can create a large retarding field in the QNB which is in the opposite direction of the built-in field associated with the nonuniform doping concentration, thus increasing the base transit time. Our results further suggest that the widely used zero majority-carrier current approximation gives rise to a larger error compared to other lesser known approximations.
Journal Title
Solid-State Electronics
Volume
39
Issue/Number
1
Publication Date
1-1-1996
Document Type
Article
Language
English
First Page
27
Last Page
31
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Effects of high-level free-carrier injection on the base transit time of bipolar junction transistors" (1996). Faculty Bibliography 1990s. 1810.
https://stars.library.ucf.edu/facultybib1990/1810
Comments
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