Authors

M. P. Hasselbeck; E. W. VanStryland;M. SheikBahae

Comments

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Abbreviated Journal Title

Phys. Rev. B

Keywords

ELECTRON SCATTERING RATES; OPTICAL NONLINEARITIES; SEMICONDUCTORS; INAS; SPECTROSCOPY; COEFFICIENTS; REFRACTION; DEPENDENCE; 2-PHOTON; PLASMAS; Physics, Condensed Matter

Abstract

An experimental demonstration of a dynamic decrease of the optical band gap of bulk n-InSb induced by picosecond, midinfrared laser pulses is reported. This occurs as a result of laser heating of the quiescent electron distribution by free-carrier absorption. The hot electrons vacate low-energy states near the conduction;band minimum,unblocking terminal states for two-photon absorption across the band gap. This ''leakage'' two-photon absorption is detected as a consequence of changes to the refractive index and absorption coefficient of the semiconductor caused by photocarriers. The onset of dynamic band unblocking agrees with a calculation of laser-induced electron heating.

Journal Title

Physical Review B

Volume

56

Issue/Number

12

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

7395

Last Page

7403

WOS Identifier

WOS:A1997YA57500051

ISSN

0163-1829

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