Title

A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET's

Authors

Authors

Z. Latif; A. OrtizConde; J. J. Liou;F. J. G. Sanchez

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

SERIES RESISTANCE; LDD MOSFETS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The capacitance-based method (C-V method) is a straightforward method for extracting the effective channel length of MOSFET's. This paper investigates the validity of such a method based on results simulated from a two-dimensional (2-D) device simulator. Thr effective channel length extracted from the C-V method is also compared with those obtained from other methods reported in the literature.

Journal Title

Ieee Transactions on Electron Devices

Volume

44

Issue/Number

2

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

340

Last Page

343

WOS Identifier

WOS:A1997WD59800017

ISSN

0018-9383

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