Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors
Abbreviated Journal Title
SURFACE RECOMBINATION CURRENT; CIRCUITS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter was developed. Device characteristics between linearly and uniformly doped HBTs was evaluated. The linearly doped HBT has higher current gain, lower base transit time, higher cutoff frequency, and lower emitter-base junction capacitance than those of the uniformly doped HBT. (C) 1997 Elsevier Science Ltd.
"Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors" (1997). Faculty Bibliography 1990s. 2038.