A new approach to extract the threshold voltage of MOSFET's
Abbreviated Journal Title
IEEE Trans. Electron Devices
Engineering, Electrical & Electronic; Physics, Applied
A new method is presented to extract the threshold voltage of MOSFET's, It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements.
Ieee Transactions on Electron Devices
"A new approach to extract the threshold voltage of MOSFET's" (1997). Faculty Bibliography 1990s. 2045.