Optimum Ge profile for base transit time minimization of SiGe HBT
Abbreviated Journal Title
BIPOLAR-TRANSISTORS; 77-K APPLICATIONS; CIRCUIT; OPTIMIZATION; TECHNOLOGY; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Optimization of the trapezoidal Ge profile to minimize base transit time of the SiGe bipolar transistor was examined. A closed-form equation to find the optimum point of the trapezoidal Ge profile for base transit time minimization as a function of temperature is derived. Experimental data published in the literature are used to compare the model predictions with measurement.
"Optimum Ge profile for base transit time minimization of SiGe HBT" (1997). Faculty Bibliography 1990s. 2101.