Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 mu m and their feasibility for waveguide quasi-phase matching
Abbreviated Journal Title
J. Opt. Soc. Am. B-Opt. Phys.
CASCADED 2ND-ORDER PROCESSES; BAND-GAP ENERGY; QUANTUM-WELL; WAVE-GUIDES; ALGAINP LASER; GAAS; SUPERLATTICE; LAYER; KTP; Optics
The second-order susceptibilities (d(ij)) of both ordered and disordered Ga0.5In0.5P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order-disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d(33)' d(31)', and d(15)' but not d(14)' can be modulated. Maker-fringe experiments were performed at 1.57 mu m to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d(14)' coefficient (110 pm/V) only and an upper limit of 60 pm/V for d'(33). More-sophisticated experimental techniques are proposed for measuring d'(33). (C) 1997 Optical Society of America.
Journal of the Optical Society of America B-Optical Physics
"Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 mu m and their feasibility for waveguide quasi-phase matching" (1997). Faculty Bibliography 1990s. 2120.