Title

Ultrafast cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator

Authors

Authors

H. S. Wang; F. J. Effenberger; P. LiKamWa;A. Miller

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE J. Quantum Electron.

Keywords

mode-locked lasers; optical modulation/demodulation; optoelectronic; devices; p-i-n diodes; quantum-confined; Stark effect; quantum-well; devices; semiconductor device modeling; ultrafast optics; EFFECT DEVICES; ELECTRON; SWEEP; TIME; Engineering, Electrical & Electronic; Optics; Physics, Applied

Abstract

We report ultrafast optical pump-probe measurements of cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator. The transmission response of the modulator is recorded over a range of reverse bias values, wavelengths, and power levels, producing several qualitatively different response types, A simplified physical model is developed to describe this behavior, This model includes transmission changes due to exciton saturation and excitonic field screening, carrier emission from the quantum wells and drift through the intrinsic region, and voltage diffusion across the p- and n-doped electrodes. This model agrees well with the experimental data.

Journal Title

Ieee Journal of Quantum Electronics

Volume

33

Issue/Number

2

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

192

Last Page

197

WOS Identifier

WOS:A1997WD89400009

ISSN

0018-9197

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