Current-dependent collector resistance of the bipolar transistor in quasi-saturation
Abbreviated Journal Title
IEE Proc.-Circuit Device Syst.
quasi-saturation; bipolar transistor; MEDICI simulation; current-dependent collector resistance; MODEL; Engineering, Electrical & Electronic
The current-dependent collector resistance of the bipolar transistor in quasisaturation has been modelled, The analytical collector resistance model is derived from device physics. The MEDICI simulation is employed to justify the assumptions used in the model derivation. The high-current collector current spreading effect on the collector resistance is accounted for. and the predictions of the collector current. using the current-dependent collector resistance model are compared with the experimental data. Good agreement between the model predictions and experimental data has been obtained.
Iee Proceedings-Circuits Devices and Systems
"Current-dependent collector resistance of the bipolar transistor in quasi-saturation" (1998). Faculty Bibliography 1990s. 2212.