Microstructural development of SCS-6 SiC fibers during high temperature creep
Abbreviated Journal Title
J. Mater. Res.
TRANSFORMATION; FILAMENTS; Materials Science, Multidisciplinary
Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 degrees C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from beta SiC to alpha SiC growing at the expense of the beta SiC The SiC1 through SiC3 regions of the fiber consist of a distinct (C + beta SiC) two-phase region. The grain growth of the beta SiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of beta SiC.
Journal of Materials Research
"Microstructural development of SCS-6 SiC fibers during high temperature creep" (1998). Faculty Bibliography 1990s. 2253.