Title

Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

Authors

Authors

Y. Gu;J. S. Yuan

Comments

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Abbreviated Journal Title

Int. J. Electron.

Keywords

INTERFACE-STATE GENERATION; P-MOSFETS; ELECTRON; MODEL; MOBILITY; DEPENDENCE; INJECTION; INVERSION; NMOSFETS; Engineering, Electrical & Electronic

Abstract

The gate-oxide thickness effects on hot-carrier-induced degradation have been investigated for submicron MOSFETs. A thinner gate oxide gives a higher substrate current, but reduced hot-electron effects. This is because the thin-gate-oxide device has smaller mobility and threshold voltage degradation due to a shift of damaged interface region towards the drain contact. The analytical substrate and drain current model has been derived. The model predictions are in good agreement with the experimental data for submicron MOSFETs with different oxide thicknesses.

Journal Title

International Journal of Electronics

Volume

85

Issue/Number

1

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1080/002072198134300

Language

English

First Page

1

Last Page

9

WOS Identifier

WOS:000074170800001

ISSN

0020-7217

Recommended Citation

"Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs" (1998). Faculty Bibliography 1990s. 2263.
https://stars.library.ucf.edu/facultybib1990/2263