An improved definition for modeling the threshold voltage of MOSFETs
Abbreviated Journal Title
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Traditionally, the threshold voltage V-T of MOSFETs is modeled using the definition that the strong inversion occurs when the surface band bending is equal to twice the potential in bulk semiconductor. In this paper, an improved V-T definition is proposed. It is demonstrated that V-T calculated from the improved definition is in better agreement with those obtained from several existing V-T extraction methods than the conventional definition. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
"An improved definition for modeling the threshold voltage of MOSFETs" (1998). Faculty Bibliography 1990s. 2393.