Electron Traps; Epitaxial Gaas; Annealed Gaas; Bulk; Dlts; Physics; Applied
Deep-level transient spectroscopy (DLTS) measurements have been made to obtain the activation energy and capture cross section in Schottky diodes. Previous theories for interface state density (ISD) functions, which are derived for metal-semiconductor junctions, made approximations that were inappropriate. This paper derives improvements to the previous analysis and calculates ISD using the measured DLTS data. As for examples, Schottky diodes of Si, GaAs, and Al(x)Ga(1-x)As have been investigated with both methods. It has been found that the previously used method overestimated both the peak maximum position and peak height of the ISD.
Journal of Applied Physics
Halder, N. C.; Kim, H. W.; D'Souza, K. M.; Barnes, D. E.; Hartson, S. E.; and Mohapatra, R., "Improved Interface State Density-Function In Metal-Semiconductor Junctions By Deep-Level Transient Spectroscopy" (1991). Faculty Bibliography 1990s. 242.