Title

A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test

Authors

Authors

S. Sheu; J. J. Liou;C. I. Huang

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; MODEL; BASE; Engineering, Electrical & Electronic; Physics, Applied

Abstract

A new approach for extracting the parameters of the AlGaAs/GaAs heterojunction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is implemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient responses of an HBT differential amplifier are simulated using the present HBT SPICE model. Results simulated from a two-dimensional (2-D) device simulator are also included in support of the model.

Journal Title

Ieee Transactions on Electron Devices

Volume

45

Issue/Number

1

Publication Date

1-1-1998

Document Type

Article

Language

English

First Page

326

Last Page

329

WOS Identifier

WOS:000071225200045

ISSN

0018-9383

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