A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test
Abbreviated Journal Title
IEEE Trans. Electron Devices
HETEROJUNCTION BIPOLAR-TRANSISTORS; MODEL; BASE; Engineering, Electrical & Electronic; Physics, Applied
A new approach for extracting the parameters of the AlGaAs/GaAs heterojunction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is implemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient responses of an HBT differential amplifier are simulated using the present HBT SPICE model. Results simulated from a two-dimensional (2-D) device simulator are also included in support of the model.
Ieee Transactions on Electron Devices
"A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test" (1998). Faculty Bibliography 1990s. 2447.