Title

An empirical model for the characterization of hot-carrier induced MOS device degradation

Authors

Authors

W. S. Wong; A. Ice;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Journal Title

Solid-State Electronics

Volume

42

Issue/Number

1

Publication Date

1-1-1998

Document Type

Article

Language

English

First Page

173

Last Page

175

WOS Identifier

WOS:000072437900023

ISSN

0038-1101

Recommended Citation

"An empirical model for the characterization of hot-carrier induced MOS device degradation" (1998). Faculty Bibliography 1990s. 2505.
https://stars.library.ucf.edu/facultybib1990/2505