A scalable bipolar transistor model for circuit simulation
Abbreviated Journal Title
Phys. Status Solidi A-Appl. Res.
Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter
A scalable bipolar transistor model for circuit simulation has been developed. The model accounts for two-dimensional effects such as emitter crowding and emitter-base sidewall injection. The model parameters are scalable and can predict the bipolar transistor parameters with different emitter widths and lengths. The scalable model is applicable for bipolar transistor at different temperatures.
Physica Status Solidi a-Applied Research
"A scalable bipolar transistor model for circuit simulation" (1998). Faculty Bibliography 1990s. 2515.