Title

A scalable bipolar transistor model for circuit simulation

Authors

Authors

J. S. Yuan; Y. Dai;C. S. Yeh

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Phys. Status Solidi A-Appl. Res.

Keywords

Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

Abstract

A scalable bipolar transistor model for circuit simulation has been developed. The model accounts for two-dimensional effects such as emitter crowding and emitter-base sidewall injection. The model parameters are scalable and can predict the bipolar transistor parameters with different emitter widths and lengths. The scalable model is applicable for bipolar transistor at different temperatures.

Journal Title

Physica Status Solidi a-Applied Research

Volume

168

Issue/Number

1

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<209::aid-pssa209>3.0.co;2-p

Language

English

First Page

209

Last Page

222

WOS Identifier

WOS:000075226500021

ISSN

0031-8965

Recommended Citation

"A scalable bipolar transistor model for circuit simulation" (1998). Faculty Bibliography 1990s. 2515.
https://stars.library.ucf.edu/facultybib1990/2515