A multi-emitter finger AlGaAs/GaAs HBT model including the effects of two-dimensional temperature distribution on emitter fingers
Abbreviated Journal Title
HETEROJUNCTION BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Two-dimensional temperature distribution on the emitter fingers of multi-finger AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is studied, and a model including such effects was developed to describe the HBT behavior and performance, such as the d.c. current gain and cutoff frequency. Device design issues such as the number of fingers, finger spacing, and finger dimension were considered. Results obtained from measurements and simulated from a three-dimensional device simulator are included in support of the model. Further, the present model is compared against the conventional model to assess the degree of inaccuracy caused by the use of one-dimensional temperature profile in HBT modeling. (C) 1998 Elsevier Science Ltd.
"A multi-emitter finger AlGaAs/GaAs HBT model including the effects of two-dimensional temperature distribution on emitter fingers" (1998). Faculty Bibliography 1990s. 2524.