A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect
Abbreviated Journal Title
Int. J. Electron.
DEPLETED SOI MOSFETS; MODEL; Engineering, Electrical & Electronic
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET.
International Journal of Electronics
"A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect" (1999). Faculty Bibliography 1990s. 2542.