Authors

A. V. Muravjov; S. H. Withers; S. G. Pavlov; V. N. Shastin;R. E. Peale

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

LASER; Physics, Applied

Abstract

A solid state broad band amplifier of terahertz radiation (1.5-4 THz), based on intersubband transitions of hot holes in p-Ge is demonstrated. The gain is investigated as a function of applied magnetic and electric fields by transmission measurements using a laser system with two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usually reported for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Distinct differences in gain dependence on applied fields are noted between low- and high-frequency modes of p-Ge laser operation. (C) 1999 American Institute of Physics. [S0021-8979(99)04718-0].

Journal Title

Journal of Applied Physics

Volume

86

Issue/Number

7

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

3512

Last Page

3515

WOS Identifier

WOS:000082652400004

ISSN

0021-8979

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