Abbreviated Journal Title
J. Appl. Phys.
LASER; Physics, Applied
A solid state broad band amplifier of terahertz radiation (1.5-4 THz), based on intersubband transitions of hot holes in p-Ge is demonstrated. The gain is investigated as a function of applied magnetic and electric fields by transmission measurements using a laser system with two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usually reported for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Distinct differences in gain dependence on applied fields are noted between low- and high-frequency modes of p-Ge laser operation. (C) 1999 American Institute of Physics. [S0021-8979(99)04718-0].
Journal of Applied Physics
Muravjov, A. V.; Withers, S. H.; Pavlov, S. G.; Shastin, V. N.; and Peale, R. E., "Broad band p-Ge optical amplifier of terahertz radiation" (1999). Faculty Bibliography 1990s. 2757.