Title

Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

Authors

Authors

A. A. Rezazadeh; S. A. Bashar; H. Sheng; F. A. Amin; A. H. Khalid; M. Sotoodeh; M. A. Crouch; L. Cattani; F. Fantini;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; MOCVD; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device de current gain, The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. (C) 1999 Elsevier Science Ltd, All rights reserved.

Journal Title

Microelectronics Reliability

Volume

39

Issue/Number

12

Publication Date

1-1-1999

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0026-2714(99)00189-4

Language

English

First Page

1809

Last Page

1816

WOS Identifier

WOS:000084310300010

ISSN

0026-2714

Recommended Citation

"Reliability investigation of InGaP/GaAs HBTs under current and temperature stress" (1999). Faculty Bibliography 1990s. 2809.
https://stars.library.ucf.edu/facultybib1990/2809