Reliability investigation of InGaP/GaAs HBTs under current and temperature stress
Abbreviated Journal Title
HETEROJUNCTION BIPOLAR-TRANSISTORS; MOCVD; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device de current gain, The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. (C) 1999 Elsevier Science Ltd, All rights reserved.
"Reliability investigation of InGaP/GaAs HBTs under current and temperature stress" (1999). Faculty Bibliography 1990s. 2809.