On the extraction of the source and drain series resistances of MOSFETs
Abbreviated Journal Title
EFFECTIVE CHANNEL-LENGTH; LDD MOSFETS; MOS-TRANSISTOR; PARAMETER; EXTRACTION; THRESHOLD VOLTAGE; PARASITIC SOURCE; DIFFERENCE; CONDUCTANCES; DEVICE; GATE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
This article reviews and scrutinizes various proposed methods to extract the individual values of drain and source resistances (R-D and R-S) of MOSFETs, which are important device parameters for modeling and circuit simulation. In general, these methods contain three basic steps: (1) the extraction of the total drain and source resistance (R-D + R-S); (2) the extraction of the difference between the drain and the source resistances (R-D - R-S); and (3) the calculation of R-D and R-S from the knowledge of (R-D + R-S) and (R-D - R-S). These methods are tested and compared in the environments of circuit simulator, device simulation and measurements. (C) 1999 Elsevier Science Ltd. All rights reserved.
"On the extraction of the source and drain series resistances of MOSFETs" (1999). Faculty Bibliography 1990s. 2826.