Title

On the extraction of the source and drain series resistances of MOSFETs

Authors

Authors

F. J. G. Sanchez; A. Ortiz-Conde;J. J. Liou

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

EFFECTIVE CHANNEL-LENGTH; LDD MOSFETS; MOS-TRANSISTOR; PARAMETER; EXTRACTION; THRESHOLD VOLTAGE; PARASITIC SOURCE; DIFFERENCE; CONDUCTANCES; DEVICE; GATE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This article reviews and scrutinizes various proposed methods to extract the individual values of drain and source resistances (R-D and R-S) of MOSFETs, which are important device parameters for modeling and circuit simulation. In general, these methods contain three basic steps: (1) the extraction of the total drain and source resistance (R-D + R-S); (2) the extraction of the difference between the drain and the source resistances (R-D - R-S); and (3) the calculation of R-D and R-S from the knowledge of (R-D + R-S) and (R-D - R-S). These methods are tested and compared in the environments of circuit simulator, device simulation and measurements. (C) 1999 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

39

Issue/Number

8

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

1173

Last Page

1184

WOS Identifier

WOS:000083472200002

ISSN

0026-2714

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