Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs
Abbreviated Journal Title
BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. The analytical results are compared with experimental data. Good agreement between the model predictions and experiment is obtained. (C) 1998 Elsevier Science Ltd. All rights reserved.
"Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs" (1999). Faculty Bibliography 1990s. 2859.