Authors

J. U. Kang; A. Villeneuve; M. Sheikbahae; G. I. Stegeman; K. Alhemyari; J. S. Aitchison;C. N. Ironside

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

2-PHOTON ABSORPTION; SEMICONDUCTORS; DISPERSION; SOLIDS; Physics, Applied

Abstract

We report measurements of the spectral dispersion and the magnitude of three-photon absorption in Al0.18Ga0.82As for photon energies between one half and one third the band gap and show that a two-parabolic-band model is valid in this material. These results indicate that there is a limited spectral range below half the band gap in AlGaAs (and presumably all semiconductors) in which the bound electronic optical nonlinearity can be used without significant multiphoton absorption.

Journal Title

Applied Physics Letters

Volume

65

Issue/Number

2

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

147

Last Page

149

WOS Identifier

WOS:A1994NW22400007

ISSN

0003-6951

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