Abbreviated Journal Title
J. Appl. Phys.
SURFACE RECOMBINATION; Physics, Applied
Base and collector leakage currents are extremely important to AlGaAs/GaAs heterojunction bipolar transistor (HBT) dc characteristics, and a simple model to describe such currents is presented. This study suggests that these currents are originated from the electron and hole leakage through the dielectric-layer (e.g., polyimide, nitride, etc.) interface at the emitter-base and base-collector peripheries, as well as through the n+-subcollector/semi-insulating substrate interface. Five HBTs having similar intrinsic make-ups (i.e., doping concentration and layer thickness) but different extrinsic make-ups (i.e., finger pattern, perimeter, dielectric layer, etc.) are investigated, and with the aid of the model, the possible mechanisms contributing to their leakage behavior identified.
Journal of Applied Physics
Liou, J. J.; Huang, C. I.; Bayraktaroglu, B.; Williamson, D. C.; and Parab, K. E., "Base And Collector Leakage Currents Of Algaas/Gaas Heterojunction Bipolar-Transistors" (1994). Faculty Bibliography 1990s. 2960.