Title

Current Transport In Algaas/Gaas Heterojunction Bipolar-Transistors Operating Between 300 And 500 K

Authors

Authors

C. S. Ho; J. J. Liou; A. Parthasarathy; S. F. Lin;C. I. Huang

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

P-N; GAAS; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The current transport in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) operating in the temperature range of 300-500 K is investigated based on an analytical model including the lattice heating effect. It is found that an uneven increase in the base and collector currents gives rise to the current gain degradation at high temperatures. In addition, the study suggests that the effect of lattice heating becomes more important if the HBT area is reduced and/or the ambient temperature is increased. Experimental data and results simulated from a device simulator are included in support of our finding.

Journal Title

Solid-State Electronics

Volume

38

Issue/Number

10

Publication Date

1-1-1995

Document Type

Article

Language

English

First Page

1759

Last Page

1763

WOS Identifier

WOS:A1995RV65700005

ISSN

0038-1101

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