Title

2-Dimensional Numerical-Analysis For Extracting The Effective Channel-Length Of Short-Channel Mosfets

Authors

Authors

R. Narayanan; A. Ortizconde; J. J. Liou; F. J. G. Sanchez;A. Parthasarathy

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Device simulations are, carried out to study the physical mechanisms underlying the effective channel length of MOSFETs. Furthermore, the adequacy of widely used methods for extracting such a parameter is examined using different free-carrier mobility models implemented in the device simulator. It is shown that the conventional definition for the effective channel length using the locations of source/drain junctions is questionable. Based on the simulation results, a more consistent and accurate definition for determining the effective channel length is also proposed.

Journal Title

Solid-State Electronics

Volume

38

Issue/Number

6

Publication Date

1-1-1995

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/0038-1101(94)00231-4

Language

English

First Page

1155

Last Page

1159

WOS Identifier

WOS:A1995RA46000006

ISSN

0038-1101

Recommended Citation

"2-Dimensional Numerical-Analysis For Extracting The Effective Channel-Length Of Short-Channel Mosfets" (1995). Faculty Bibliography 1990s. 3009.
https://stars.library.ucf.edu/facultybib1990/3009