Authors

R. G. Wilson; B. L. H. Chai; S. J. Pearton; C. R. Abernathy; F. Ren;J. M. Zavada

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

MOLECULAR-BEAM EPITAXY; GAN; GROWTH; ALN; INN; Physics, Applied

Abstract

Hydrogen as H-2 has been incorporated into LiAlO2 and LiGaO2 by both ion implantation and by exposure to a plasma at 250 degrees C. In the implanted samples, approximately 50% of the hydrogen is lost from the surface during annealing at 500 degrees C for 20 min, and essentially all is gone by 700 degrees C. This hydrogen retention is considerably less than for other materials that are being used as substrates for III-nitride epilayer growth, such as SiC and sapphire. The indiffusion of H-2 from a plasma is much faster for LiAlO2 with an apparent diffusivity at 250 degrees C of similar to 10(-13) cm(-2) s(-1), approximately two orders of magnitude larger than for LiGaO2. Hydrogen outdiffusion from LiAlO2 or LiGaO2 substrates during III-nitride epitaxy should not be a significant problem; the hydrogen should have left these materials at temperatures less than epitaxial layer growth temperatures. (C) 1996 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

69

Issue/Number

25

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

3848

Last Page

3850

WOS Identifier

WOS:A1996VX97500026

ISSN

0003-6951

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