High-Dose Carbon Implantation In Nickel
Abbreviated Journal Title
Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms
BACKSCATTERING ANALYSIS; Instruments & Instrumentation; Nuclear Science & Technology; Physics, ; Atomic, Molecular & Chemical; Physics, Nuclear
The diffusion of ion-implanted carbon in single crystal and polycrystalline nickel has been investigated. 400 keV high dose (8 x 10(17)/cm2) carbon ions were implanted into nickel samples, followed by annealing in flowing Ar gas at temperatures ranging from 300 to 1010-degrees-C. The diffusion of carbon atoms was studied using Rutherford backscattering spectrometry (RBS) and non-Rutherford proton elastic scattering combined with the channeling technique. In the case of single crystal nickel, segregation occurred at 400-degrees-C and significant carbon diffusion was observed at 600-degrees-C. After long-term annealing at 850-degrees-C/4 h plus 470-degrees-C/4 h, no measurable carbon remained in the implanted layer. For polycrystalline nickel, the segregation of the implanted carbon also occurred at 400-degrees-C. All of the implanted carbon was diffused out of the implanted layer at 650-degrees-C.
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
Article; Proceedings Paper
"High-Dose Carbon Implantation In Nickel" (1993). Faculty Bibliography 1990s. 3078.