The Controlled Disordering Of Quantum-Wells Using Surface Oxidation
Abbreviated Journal Title
Semicond. Sci. Technol.
DIFFUSION; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter
A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.
Semiconductor Science and Technology
"The Controlled Disordering Of Quantum-Wells Using Surface Oxidation" (1994). Faculty Bibliography 1990s. 3091.