2-Dimensional Lateral Bipolar-Transistor Model For Circuit Simulation
Abbreviated Journal Title
Int. J. Electron.
Engineering, Electrical & Electronic
A lateral bipolar transistor circuit model including two-dimensional current characteristics has been developed. The model accounts for the physical effects of base width modulation, base conductivity modulation, hole-electron plasma-induced bandgap narrowing, and current-dependent base resistance. SPICE simulation employing the present model shows good agreement with computer experimental results.
International Journal of Electronics
"2-Dimensional Lateral Bipolar-Transistor Model For Circuit Simulation" (1991). Faculty Bibliography 1990s. 379.