High-Performance P-N-P Heterojunction Bipolar-Transistor Design
Abbreviated Journal Title
VELOCITY OVERSHOOT; CAPACITANCE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The performance of P-n-p AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for analog and digital circuit applications is compared to that of N-p-n HBTs. The theoretical analysis shows that the P-n-p HBTs are comparable with N-p-n HBTs in high-speed digital operation, while the N-p-n HBTs exhibit higher cut-off frequency in microwave and millimeter-wave operation. Analytical equations and SPICE circuit simulation are used in support of the comparison between the P-n-p and N-p-n HBTs. Optimization of device doping profile design for P-n-p and N-p-n heterojunction bipolar transistors in analog and digital circuits are presented.
"High-Performance P-N-P Heterojunction Bipolar-Transistor Design" (1991). Faculty Bibliography 1990s. 382.