Abbreviated Journal Title
Phys. Rev. B
Keywords
Nonlinear Optical-Properties; Adiabatic Approximation; States; Physics; Condensed Matter
Abstract
A hyperspherical formalism is shown to be an appropriate approach for the investigation of the three-particle complex corresponding to an exciton bound to a Coulomb center in a semiconductor. The ground- and excited-state potential curves and binding energies are calculated as a function of the mass ratio of the hole and electron, and the concept of a critical mass is discussed. The results that we have obtained are in very good agreement with variational calculations for several semiconductor materials.
Journal Title
Physical Review B
Volume
46
Issue/Number
4
Publication Date
1-1-1992
Document Type
Article
Language
English
First Page
2101
Last Page
2108
WOS Identifier
ISSN
1098-0121
Recommended Citation
De Groote, J. J.; Hornos, J. E.; Coelho, H. T.; and Caldwell, C. D., "Hyperspherical Formulation Of Impurity-Bound Excitons In Semiconductors" (1992). Faculty Bibliography 1990s. 436.
https://stars.library.ucf.edu/facultybib1990/436
Comments
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