Title
Modulating The Bipolar Junction Transistor Subjected To Neutron-Irradiation For Integrated-Circuit Simulation
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Space; Engineering, Electrical & Electronic; Physics, Applied
Abstract
Bipolar junction transistors (BJT's) are susceptible to particle bombardment in radiative environment. This paper presents a model which is capable of predicting BJT performance subjected to neutron irradiation and is suitable for SPICE circuit simulation. It is shown that neutron irradiation affects slightly the emitter-base space-charge region capacitance but strongly the forward-active dc current gain. Results calculated from the present model compare favorably with measured dependencies available in the literature. The present model is also implemented into SPICE, and the performance of a BJT differential amplifier is simulated.
Journal Title
Ieee Transactions on Electron Devices
Volume
39
Issue/Number
3
Publication Date
1-1-1992
Document Type
Article
DOI Link
Language
English
First Page
593
Last Page
597
WOS Identifier
ISSN
0018-9383
Recommended Citation
"Modulating The Bipolar Junction Transistor Subjected To Neutron-Irradiation For Integrated-Circuit Simulation" (1992). Faculty Bibliography 1990s. 521.
https://stars.library.ucf.edu/facultybib1990/521
Comments
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