Aluminum; Physics; Applied
1 MeV carbon ions were implanted into single-crystal copper which was then annealed in argon at temperatures ranging from 350 to 750-degrees-C. Regrowth of the radiation-damaged copper was examined by RBS-channeling measurements. Carbon segregation occurred on annealing at 750-degrees-C. Prolonged annealing at 750-degrees-C caused blistering of the copper layer over the buried carbon. After removal of the blistered copper overlayer, the previously buried carbon layer was examined by Raman scattering, showing that graphite is the dominant phase.
Applied Physics Letters
Zhang, Z. H.; Chow, L.; Paschke, K.; Yu, N.; Tao, Y. K.; Matsuishi, K.; Meng, R. L.; Hor, P.; and Chu, W. K., "High-Energy Carbon-Ions Implantation - An Attempt to Grow Diamond Inside Copper" (1992). Faculty Bibliography 1990s. 621.