Avalanche Breakdown Effects On Algaas/Gaas Hbt Performance
Abbreviated Journal Title
Int. J. Electron.
COLLECTOR BASE JUNCTION; BIPOLAR-TRANSISTORS; MULTIPLICATION; MODEL; Engineering, Electrical & Electronic
The performance of heterojunction bipolar transistors operating in the avalanche breakdown regime has been evaluated. The analysis shows that AlGaAs/GaAs HBT under avalanche breakdown has higher collector-base junction capacitance, lower Early voltage, higher device noise, lower power efficiency, lower cut-off frequency, reduced device switching speed, and degraded maximum frequency of oscillation.
International Journal of Electronics
"Avalanche Breakdown Effects On Algaas/Gaas Hbt Performance" (1993). Faculty Bibliography 1990s. 963.