Title

Switch-Off Transient Analysis For Heterojunction Bipolar-Transistors In Saturation

Authors

Authors

J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

CHARGE-CONTROL MODEL; DC CHARACTERISTICS; TIME; VOLTAGE; HBTS; BASE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has been developed. The minority charges stored in the base and collector as a function of time are derived. The storage time of the heterojunction bipolar transistor is determined from the minority charge stored in the collector. The storage time can be significantly reduced using double heterojunction bipolar transistors. The present analysis is useful for determining non-quasi-static collector current during switch-off transient.

Journal Title

Solid-State Electronics

Volume

36

Issue/Number

9

Publication Date

1-1-1993

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/0038-1101(93)90163-k

Language

English

First Page

1261

Last Page

1266

WOS Identifier

WOS:A1993LQ00700006

ISSN

0038-1101

Recommended Citation

"Switch-Off Transient Analysis For Heterojunction Bipolar-Transistors In Saturation" (1993). Faculty Bibliography 1990s. 965.
https://stars.library.ucf.edu/facultybib1990/965