Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
Silicon; Nanocrystals; Light; Physics; Applied
Abstract
Erbium sensitization is observed in as-deposited Er3+ doped Si-rich SiO2, ruling out the involvement of Si nanocrystals in the Er3+ excitation in these samples. The Er3+ excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 degrees C under 355 and 532 nm excitation. The density of sensitized Er3+ ions is shown to be excitation wavelength independent, while the shape of the Er3+ excitation spectra is governed by a wavelength dependent Er3+ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium.
Journal Title
Applied Physics Letters
Volume
95
Issue/Number
23
Publication Date
1-1-2009
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Savchyn, Oleksandr; Todi, Ravi M.; Coffey, Kevin R.; Ono, Luis K.; Cuenya, Beatriz Roldan; and Kik, Pieter G., "Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films" (2009). Faculty Bibliography 2000s. 2095.
https://stars.library.ucf.edu/facultybib2000/2095
Comments
"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."