Title

An improved substrate current model for deep submicron MOSFETs

Authors

Authors

W. Li; J. S. Yuan; S. Chetlur; J. Zhou;A. S. Oates

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement between the present model predictions and experimental data is obtained. (C) 2000 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

44

Issue/Number

11

Publication Date

1-1-2000

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(00)00170-2

Language

English

First Page

1985

Last Page

1988

WOS Identifier

WOS:000165546700013

ISSN

0038-1101

Recommended Citation

"An improved substrate current model for deep submicron MOSFETs" (2000). Faculty Bibliography 2000s. 2672.
https://stars.library.ucf.edu/facultybib2000/2672