Title
An improved model for substrate current of submicron MOSFETs
Abbreviated Journal Title
Solid-State Electron.
Keywords
MOS device; substrate current; electrostatic discharge; impact; ionization; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliability of MOSFET. This paper develops an improved and analytic model for such a Current based on the length of and maximum electric field in the high-field region near the drain junction. The present model is compared against several existing substrate current models reported in the literature. and results from device simulation and measurements are also included in support of the model development. (C) 2002 Elsevier Science Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
46
Issue/Number
9
Publication Date
1-1-2002
Document Type
Article
Language
English
First Page
1395
Last Page
1398
WOS Identifier
ISSN
0038-1101
Recommended Citation
"An improved model for substrate current of submicron MOSFETs" (2002). Faculty Bibliography 2000s. 3208.
https://stars.library.ucf.edu/facultybib2000/3208