A physics-based model for the substrate resistance of MOSFETs
Abbreviated Journal Title
substrate resistance; MOSFETs; modeling; impact ionization; electrostatic discharge; BREAKDOWN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
A compact and accurate model for the substrate resistance is essential and critical for the characterization of MOSFET operation, particularly for the case of relatively large drain current and sizeable substrate current. This paper develops such a model taking into account the effects of device geometry, impact ionization, and conductivity modulation. Comparison of the present and existing models is given, and results obtained from device simulation are included in support of the model. (C) 2002 Published by Elsevier Science Ltd.
"A physics-based model for the substrate resistance of MOSFETs" (2002). Faculty Bibliography 2000s. 3210.