Title

Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system

Authors

Authors

S. M. Schwarz; B. W. Kempshall; L. A. Giannuzzi;F. A. Stevie

Abbreviated Journal Title

Acta Mater.

Keywords

SIMS; grain boundary diffusion; Cu(Ni); twist grain boundaries; Materials Science, Multidisciplinary; Metallurgy & Metallurgical; Engineering

Abstract

The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10degrees, Sigma5 (36.87degrees), and 45degrees, were measured using the SIMS technique. The average activation energy for grain boundary diffusion, Q(b), was found to be 245 +/- 22, 140 +/- 10, and 102 +/- 15 kJ/mol, for the 10degrees, Sigma5, and 45degrees twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, sdeltaD(bo), was found to be 9.6 +/- 1.24 x 10(-9), 1.1 +/- 0.17 X 10(-14), and 1.3 +/- 0.36 x 10(-16) m(3)/S, for the 10degrees, Sigma5, and 45degrees twist grain boundaries, respectively. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Journal Title

Acta Materialia

Volume

50

Issue/Number

20

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

5079

Last Page

5084

WOS Identifier

WOS:000179478300011

ISSN

1359-6454

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