Ferromagnetism and microstructure in Cr implanted p-type (100) silicon
Abbreviated Journal Title
Solid State Commun.
Cr; Ion implantation; Anneal; Ferromagnetism; DIFFUSION PROFILES; MN; SI; TEMPERATURE; FILMS; TIO2; Physics, Condensed Matter
The magnetic properties and microstructure of p-type Si (100) implanted with 1.0 x 10(15) cm(-2) of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67-0.75 emu/g in a wide temperature range are observed in the as-implanted sample. Annealing of the as-implanted sample modifies the microstructure and therefore weakens the magnetic exchange interaction. TEM observations show that the as-implanted silicon layer is amorphous. After annealing at temperature > = 800 degrees C, the SEM showed that the implanted profile layer became blurred and narrow, the ferromagnetism was weakened, which should have resulted from the re-crystallization of the implanted amorphous layer. These results were further compared with magnetic hysteresis observed in Mn-implanted silicon. (C) 2008 Elsevier Ltd. All rights reserved.
Solid State Communications
"Ferromagnetism and microstructure in Cr implanted p-type (100) silicon" (2008). Faculty Bibliography 2000s. 351.