Title

Grain boundary effect on electron-beam-induced current in La3Ga5.5Ta0.5O14 crystal

Authors

Authors

M. M. C. Chou;L. Chernyak

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Mater. Res. Bull.

Keywords

oxides; electron microscopy; defect; diffusion; SURFACE-RECOMBINATION VELOCITY; CARRIER DIFFUSION LENGTH; Materials Science, Multidisciplinary

Abstract

La3Ga5.5Ta0.5O14 crystal recently attracted more attention due to its superior electromechanical properties and high Q x f product. We report that the first electron-beam-induced current experiment on La3Ga5.5Ta0.5O14 single crystal. This method is employed to study the effect of the crystal's grain boundary on the incident electron beam. The experimental results clearly show that when the electron beam scans over the grain boundary of the crystal, a fraction of the carriers recombine at the grain boundary and is unavailable for the current generation. This recombination rate will be enhanced when the electron beam was close to the boundary and cause a dip in the collected current. Although the crystal is an insulator, this effect still can be observed if the coating metal is proper to be chosen. It is also pointed out that the different diffusion lengths of the crystal might be due to the tilted grain boundary. (C) 2005 Elsevier Ltd. All rights reserved.

Journal Title

Materials Research Bulletin

Volume

40

Issue/Number

11

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

1883

Last Page

1890

WOS Identifier

WOS:000232911600001

ISSN

0025-5408

Share

COinS