Title

Analysis and modeling of LC oscillator reliability

Authors

Authors

A. Sadat; Y. Liu; C. Z. Yu;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

amplitude of oscillation; gate oxide breakdown; hot carriers; LC; oscillator; MOS varactor; SOFT-BREAKDOWN; PHASE NOISE; HOT-CARRIER; PERFORMANCE; DESIGN; Engineering, Electrical & Electronic; Physics, Applied

Abstract

In this paper, MOS device degradations due to hot carrier and gate oxide breakdown are shown experimentally, and their effects on the NMOS LC oscillator have been evaluated analytically and through SpectreRF simulation. The reduction in transconductance of the differential pair transistors may cause the oscillation to cease. The amplitude of oscillation reduces as the equivalent tank resistance decreases due to the breakdown effect on the MOS varactor. The reduction of amplitude reduces the tank capacitances, and therefore shifts the frequency of oscillation and increases the oscillator phase noise. The tank amplitude of the oscillator is derived analytically. A closed-form expression for the average capacitance of the varactor that accounts for large-signal effects is presented. Finally, a set of guidelines to design an LC oscillator in reliability is presented.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

5

Issue/Number

1

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

119

Last Page

126

WOS Identifier

WOS:000229414400013

ISSN

1530-4388

Share

COinS